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This paper presents the design and optimisation of film bulk acoustic wave resonator (FBAR) using nano electro mechanical systems (NEMS) technology in 10–20 GHz frequency band. The effect of thickness, width and length and damping factor of the FBAR are analysed. The air-gap FBAR are designed due its ability to achieve high quality (Q) factor in 10–20 GHz frequency band. The proposed designs achieve...
Water based Remazol Orange was utilized as the dye sensitizer for dye sensitized solar cell. The annealing temperature of TiO2 working electrode was set at 450 °C. The performance of the device was investigated between dye concentrations of 0.25 mM and 2.5 mM at three different immersion times (3, 12 and 24 hours). The adsorption peak of the dye sensitizer was evaluated using UV-Vis-Nir and the device...
We report the enhancements on pHEMT epilayers to suite the high speed applications for IoT. Presented here are the DC and RF comparisons between XMBE #109 as the baseline of high speed pHEMT and VMBE #2100 as the enhanced epitaxial layer. The Hall data from Van der Pauw measurement shows higher sheet carrier concentration is observed on the improved epitaxial layer devices. The DC comparisons between...
This paper presents the design and optimization of high quality (Q) factor inductors using Micro Electro-Mechanical Systems (mEMs) technology for 10GHz to 20GHz frequency band. Two inductors have been designed with square and circular topologies. Inductors are designed on Silicon-on-Sapphire (SOS) because of its advantages including high resistivity and low parasitic capacitance. The effects of various...
A homogeneous film of acid functionalized Carbon Nanotubes was deposited on the paper substrate using Langmuir-Blodgett technique. The palladium nanoparticles were dropped on the nanotubes network afterword for device enhancement. The sensitivity of the device towards hydrogen gas was tested at three temperatures; room temperature, 200 °C and 300 °C in atmospheric conditions. The results show that...
We report a comprehensive etching study on the gate recess step for the fabrication of the novel high speed pHEMT devices. The experiments focused on the elimination of “hump” structure as a result of an incomplete etching process at the InGaAs cap layer. In this work, two types of test samples were used, namely bulk InGaAs and epitaxial structure together with an etch stop layer. The result showed...
Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications is substantial to the future transistors that will operate in high speed and low noise conditions. The novel pHEMT is constructed by sandwiching two different materials together with different lattice constants, for instance InGaAs and InAlAs in order to form a heterojunction in between. However, InP is only utilised to be...
HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the device. The heterostructure of pHEMT improve the performance two-dimension electron gas (2DEG) in the channel layer. With these, pHEMT is believed could...
Graphene has excellent properties that are useful in many electronic device applications. In this report, a mechanical exfoliation method has been used to fabricate a field-effect device based on a thin film of few-layer graphene (FLG). The occurrence of p-doping and hysteresis in the current-voltage behavior was observed and characterized. The possible reasons for this observation were explained...
In this paper, a 2.4 GHz CMOS low noise amplifier (LNA) for wireless sensor network (WSN) application using CMOS 0.13-µm Silterra technology is presented. The proposed design employed two-stage forward body bias technique with cascode configuration in order to obtain ultra-low power LNA design with high gain. The simulation results show that the total power consumed is only 0.49 mW at low supply voltage...
In this paper, we present the fabrication and electrical characterization of field-effect transistor-based sensor with integrated graphene oxide (GO) on channel between source and drain. We aim to demonstrate the optimum condition in electrical performance for field-effect transistor-based biosensor device. Graphene oxide prepared by using modified hummers method was deposited on the channel with...
The suspension of single-walled carbon nanotubes (SWCNTs) that was functionalized by organic dye, was used as a sensing material. The Golden orange dye (Color Index : 40215) was used as the dispersion agent in order to establish a stable suspension of SWCNTs in water. The ratio of dye and deionized water (DI water) mixture is 1:1. Uniform thin film of SWCNTs was produced using vacuum filtration method...
Vacuum filtration method was applied to build optically homogeneous film of palladium (Pd) nanoparticles dispersed multi-walled carbon nanotubes (MWCNTs) networks on plastic substrate. Measurement of the sheet resistance as a function of MWCNTs concentration showed a transition from 2D percolation to 3D conduction behaviour when the concentration of MWCNTs exceeded 0.015 mg/ml. The electrical response...
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