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This paper discusses on the differential LNA design on Pseudomorphic High-electron-mobility transistor (pHEMT) based technology for wireless application, and the standard 1μm pHEMT is implemented throughout the design. The LNA design has been completed with two stages, with the purpose of successfully enhance the gain and noise performance. The proposed LNA design has the functionality of application...
This paper presents the design and optimisation of film bulk acoustic wave resonator (FBAR) using nano electro mechanical systems (NEMS) technology in 10–20 GHz frequency band. The effect of thickness, width and length and damping factor of the FBAR are analysed. The air-gap FBAR are designed due its ability to achieve high quality (Q) factor in 10–20 GHz frequency band. The proposed designs achieve...
Water based Remazol Orange was utilized as the dye sensitizer for dye sensitized solar cell. The annealing temperature of TiO2 working electrode was set at 450 °C. The performance of the device was investigated between dye concentrations of 0.25 mM and 2.5 mM at three different immersion times (3, 12 and 24 hours). The adsorption peak of the dye sensitizer was evaluated using UV-Vis-Nir and the device...
We report the enhancements on pHEMT epilayers to suite the high speed applications for IoT. Presented here are the DC and RF comparisons between XMBE #109 as the baseline of high speed pHEMT and VMBE #2100 as the enhanced epitaxial layer. The Hall data from Van der Pauw measurement shows higher sheet carrier concentration is observed on the improved epitaxial layer devices. The DC comparisons between...
This paper presents the design and optimization of high quality (Q) factor inductors using Micro Electro-Mechanical Systems (mEMs) technology for 10GHz to 20GHz frequency band. Two inductors have been designed with square and circular topologies. Inductors are designed on Silicon-on-Sapphire (SOS) because of its advantages including high resistivity and low parasitic capacitance. The effects of various...
A homogeneous film of acid functionalized Carbon Nanotubes was deposited on the paper substrate using Langmuir-Blodgett technique. The palladium nanoparticles were dropped on the nanotubes network afterword for device enhancement. The sensitivity of the device towards hydrogen gas was tested at three temperatures; room temperature, 200 °C and 300 °C in atmospheric conditions. The results show that...
We report a comprehensive etching study on the gate recess step for the fabrication of the novel high speed pHEMT devices. The experiments focused on the elimination of “hump” structure as a result of an incomplete etching process at the InGaAs cap layer. In this work, two types of test samples were used, namely bulk InGaAs and epitaxial structure together with an etch stop layer. The result showed...
Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications is substantial to the future transistors that will operate in high speed and low noise conditions. The novel pHEMT is constructed by sandwiching two different materials together with different lattice constants, for instance InGaAs and InAlAs in order to form a heterojunction in between. However, InP is only utilised to be...
HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the device. The heterostructure of pHEMT improve the performance two-dimension electron gas (2DEG) in the channel layer. With these, pHEMT is believed could...
Graphene has excellent properties that are useful in many electronic device applications. In this report, a mechanical exfoliation method has been used to fabricate a field-effect device based on a thin film of few-layer graphene (FLG). The occurrence of p-doping and hysteresis in the current-voltage behavior was observed and characterized. The possible reasons for this observation were explained...
This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are brought about by a judicious combination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement...
High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology into which the field plate is being incorporated. Simulations have then been used to design field-plate...
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