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This paper presents a performance comparison between two current sense amplifiers (CSA) architectures, designed, simulated and implemented in a typical low cost BCD technology. The evaluation was done considering the main parameters that affect the sensing accuracy and both proposed low power circuits have been benchmarked against market available products.
Interface state density (Dit) at SiO2/4H-SiC interfaces is investigated using capacitance-voltage (C-V) characterization. Two different measurement methods for Dit determination (both C-V at different temperatures in the range of 80–300K and high frequency (HF) vs quasi static (QS) characteristics) have been used. A significant reduction of Dit is observed, almost one order of magnitude, after a post...
SiC devices' electrical properties used as sensing mechanisms are demonstrated for two types of sensors. A Schottky barrier diode (SBD) is proposed as a temperature sensor while a MOS capacitor is used for gas (hydrogen) detection. A layout with different active contacts, having 200, 300 and 400µm diameters and similar technology is designed and used for fabricating both sensors. An automatic high...
Temperature behavior of 4H-SiC MOS capacitor is investigated. A new layout with several active MOS structures is proposed. Measured C-V characteristics show good thermal stability up to 300˚C. The main electrical parameters of the MOS structure have been extracted by measurements on wafer and encapsulated samples.
A supply technique used for an electric heating resistor mounted inside a thermal chuck system which supports wafer testing in high temperatures domain is described in this paper. Following this technique, a platform for low noise wafer measurements may be develop.
Two architectures of a bandgap reference with CMOS operational amplifiers are investigated, implemented and compared. In order to reduce the dependence of the reference voltage with temperature and power supply, the trimming technique is often used. We propose a new method of lowering the reference voltage variation, based on a very low offset voltage amplifier. Two operational amplifier schematics...
This paper describes the architecture of a fully integrated oscillator in CMOS technology, emphasizing the need for a simple design in order to achieve desired performances. The effect of parasitic transitions is investigated and eliminated.
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