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Two series of CIGS thin films were deposited on Molybdenum coated soda lime glass (SLG/Mo) substrates, using physical vapor deposition (PVD) 3-stage process. The 3-stage deposition process was carried out as such during the deposition of the first series of CIGS films the substrate was in linear motion; whereas for the second series of CIGS films the substrate was held stationary during the deposition...
Three different series of p-type (100) Crystalline Silicon (c-Si) FZ wafers of about 270 μm thickness with resistivity of 2–4 Ω-cm were textured by three different concentrations of KOH (2.5 wt.%, 3.5 wt.%, and 4.5 wt.%). For every series of textured wafers, three samples were textured, each of 1×1.5 inch2 size. The texturing process was interrupted at different duration of 20 min, 40 min, and 60...
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