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The goal of this work is to study parameters related to the analog performance of tunnel field effect transistors (TFETs). The obtained results have been analyzed in terms of temperature variation (ranging from 25°C to 150°C) and source composition (Sh-xGex and 100% Si). The first part is focused on characteristic curves of the drain current as a function of gate voltage and drain voltage. Next step...
In this work the pTFET is evaluated from analog application point of view, through a direct comparison with the well-known pFinFET performance. This evaluation is mainly focused on the intrinsic voltage gain and the unity gain frequency. Although the total capacitance of FinFETs showed to be worse than for pTFETs, the transconductance behavior plays the main role and results in a higher unity gain...
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