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In this paper, we use Kinetic Monte Carlo (KMC) simulations to investigate CBRAM variability. A full consistent model able to simulate SET, RESET, retention and endurance characteristics was proposed for the 1st time, allowing to describe experimental data obtained on Al2O3/CuTex based CBRAM. The role of oxygen vacancy generation during programming is described and its impact on reliability (retention...
CBRAMs are a kind of RRAMs fabricated in the BEOL. They are a promising breakthrough for including permanent retention mechanisms (non-volatility) in embedded systems at low cost. Thus, they are becoming very interesting for the design community. For using this device in innovative circuits, a compact model is mandatory. In this paper, we propose a continuous physical compact model, implemented in...
Back-end-of-line non-volatile resistive memories like Phase Change Memories (PCMs) are promising to solve memory issues in different architectures. In this paper, we investigate the usage of PCM to build an elementary configuration memory node for reconfigurable logic, such as Field-Programmable Gate Arrays (FPGAs). We propose an elementary circuit realized by 2 resistive memories and 1 programming...
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