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In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enchance the current drive. Compared with conventional DG-TFET, the propsed TFET has steeper average subthreshold swing (SS), larger on currents, smaller supply voltage. The resason of improvements is mainly attributed to the enhanced tunneling electric field high-k gate oxide brings...
In this paper, asymmetric gate structure and pocket source are proposed into the double-gate tunneling FET (DG TFET). Steeper average subthreshold swing (SS) and larger on currents are observed in the proposed TFET as compared with conventional TFET. The improvements are attributed to a larger volume tunneling due to the enhanced body electric field. In addition, threshold voltage adjustment is achieved...
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