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The design and measurements of a fabricated novel digitally programmable wideband power amplifier (PA) are presented. The PA is made suitable for use in all communication standards, including GSM, 3G, LTE and Femto-cells, offering a bandwidth of several octaves covering presently 300 MHz to 3.5 GHz. It meets power, efficiency and linearity specifications. The amplifier showed excellent performances...
A multi-band PHEMT 5 × 7 mm2 PA module for mobile applications is described based upon a stacked FET structure. The PA has 28.5 dBm linear output power and over 40 % PAE with −38 dBc ACLR for a 3.2 V supply voltage, covering a wide frequency range of 698–915 MHz, 1430–1450 MHz and 1710–1980 MHz. A Stacked FET structure and the method to align voltage phase of stacked FETs are described. The module...
Based upon a unique Junction PHEMT device, a low voltage ultra-wideband high efficiency power amplifier has been realized for multi-band, multi-mode (LTE/WCDMA/GSM) mobile terminals. To the best of the authors' knowledge, it is currently the widest frequency range multi-mode PA available for such applications -with the ability to cover 698–915MHz with just one “Low-Band” PA for all possible band allocations...
Based upon a unique Junction PHEMT device, a low voltage ultra-wideband high efficiency power amplifier has been realized for multi-band, multi-mode (LTE/WCDMA/GSM) mobile terminals. To the best of the authors' knowledge, it is currently the widest frequency range multi-mode PA available for such applications -with the ability to cover 698–915MHz with just one “Low-Band” PA for all possible band allocations...
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