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The knowledge of the exact frequency of an optical source has always been one of the ultimate goals in optics. Since the discovery of the laser, complex systems have been developed to address this challenge. That effort reached a significant milestone with the advent of the femtosecond laser frequency comb that reduced the system size from an entire lab down to the bench‐top. That spurred interest...
An integrated artificial fast saturable absorber at 1.9 μm is demonstrated in a CMOS-compatible process. It is based on the Kerr effect in a nonlinear Mach-Zehnder Interferometer using silicon nitride waveguides embedded in SiO2.
An integrated optical phased array which focuses radiated light in one dimension to a tightly confined spot in the near field is demonstrated for the first time and proposed for chip-scale optical trapping applications.
Large-scale optical phased arrays at 635nm and 1550nm wavelengths are demonstrated with aperture sizes up to 4×4mm2. A diffraction limited spot with a record 0.021°×0.021° divergence and output powers as high as 400mW are shown.
We demonstrate quasi-phase-matched second harmonic generation in silicon waveguides with periodically patterned p-i-n junctions using a field-induced χ(2). A maximum efficiency of P2ω/Pω2 =13%/W is measured and multiple signal wavelengths are shown by changing the period.
We demonstrate an athermally synchronized distributed feedback laser cascaded with microring filters on a silicon photonic platform, with >10dB extinction ratio and a synchronized wavelength shift of 0.02 nm/ ° from 20 to 50 °.
We demonstrate an octave spanning coherent supercontinuum generated in a silicon waveguide covering the near to shortwave IR (SWIR) region. The measured −20 dB SC span ranges from 1.124 μm to 2.4 μm.
A fully-integrated Q-switched laser is demonstrated at 1.9μm using thulium-doped aluminum oxide waveguides, with the potential for achieving an on-chip passively mode-locked laser. All components of the laser are fabricated in a CMOS-compatible silicon photonics process.
Unidirectional waveguide grating antennas for nanophotonic phased arrays are demonstrated with over 90% directionality. Unidirectional emission eliminates the fundamental problem of element factor blind spots due to reflections of the antenna radiation within the substrate.
The spontaneous emission lifetime in Al2O3:Tm3+ waveguides is measured to be 568 ± 48 μs, using a frequency-domain method. The method is studied and verified in Er3+-doped silica fiber, yielding a measured lifetime of 9.73 ± 0.08 ms.
We propose a curved erbium doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) laser for a reliable integrated photonics light source. The curved structure allows us for compensation of the radially varying film thickness due to the Al2O3:Er3+ deposition process. In a conventional straight DFB structure, we observe randomly distorted transmission responses and relatively higher threshold...
We report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 mW and 387 mW, and slope efficiencies of 14% and 23% respectively. More than 70 dB side-mode suppression ratio are achieved for both lasers. This work extends the applicability of silicon photonic microsystems into the 2 μm region.
We demonstrate integrated, mode-evolution-based, 1×2 port high-pass/low-pass filters in a silicon photonics platform that can simultaneously achieve broadband operation, single cutoff wavelength, and a record high filter roll-off of 2.5 dB/nm for the first time.
We demonstrate frequency stabilization of a continuous-wave laser using an integrated TiO2 athermal cavity as a reference for the first time, and show linewidth improvement by a factor of 6 compared to a SiN cavity.
Double-chirped Bragg gratings for use in dispersion compensation are demonstrated using silicon nitride waveguides, on a silicon photonics platform that allows for 3-D integration of photonic devices with CMOS electronics.
A 4.5-μm-radius resonant germanium-on-silicon photodetector is first demonstrated with evanescent coupling from bus waveguide, achieving 2.03nA dark current, 1.04A/W responsivity at 1530nm, 32.9GHz electro-optic bandwidth and enhancement on responsivities for longer wavelengths (>0.3A/W at 1630nm).
We demonstrate an erbium-doped fiber laser with a tunable silicon microring cavity. We measured a narrow laser linewidth (16 kHz) and single-mode continuous-wave emission over the C-band (1530nm-to-1560nm) at a swept-wavelength rate of 22,600nm/s or 3106THz/s.
We demonstrate a DFB laser with a record low temperature (250 °C) fabrication process of low-loss (>0.1 dB/cm) amorphous Al2O3:Er3+ gain medium by utilizing the substrate bias, facilitating laser integration in a fully CMOS-compatible platform.
We demonstrate a mode-evolution based coupler for Ge-on-Si photodetectors achieving uniform power absorption in germanium leading to an 88% increase in photocurrent generation under 29mW illumination. We also measure a 7.4mA/cm2 dark current density at −1V, 1550nm responsivity of 1.01A/W and 40GHz 3-dB electro-optic bandwidth.
We demonstrate the first large-scale integrated nanophotonic phased array for visible wavelengths in a silicon nitride platform. The array consists of 32×32 optical antenna elements designed to project complex intensity patterns in the far field at a wavelength of λ = 635 nm.
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