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We demonstrate a mode-evolution based coupler for Ge-on-Si photodetectors achieving uniform power absorption in germanium leading to an 88% increase in photocurrent generation under 29mW illumination. We also measure a 7.4mA/cm2 dark current density at −1V, 1550nm responsivity of 1.01A/W and 40GHz 3-dB electro-optic bandwidth.
We propose and experimentally demonstrate nano-antenna emitters coupled to a dielectric waveguide. Initial measured emitter efficiencies are 4.9–13% with simulations predicting > 50% efficiencies with bandwidths exceeding 300nm in more advanced and ideally fabricated geometries.
For exascale computing, optical interconnects will need to operate using low voltage and low power. Here, a differentially signaled silicon resonant modulator is demonstrated with 7dB extinction using 3.2fJ/bit and 500mV signal amplitude at 10Gbps.
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