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We present poly-silicon depletion-based optical modulators realized in a 65 nm CMOS platform for monolithic integration with electronics. Speeds up to 12.5 Gbit/s can be achieved with 5 dB insertion loss and 2.3 dB extinction ratio.
Limitations of silicon photonics can be overcome by hybrid integration or by photonic multi-chip systems. We give an overview on recent progress regarding silicon-organic hybrid (SOH) integration as well as multi-chip integration enabled by photonic wire bonding.
Silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration combines organic electro-optic materials with silicon photonic and plasmonic waveguides. The concept enables fast and power-efficient modulators that support advanced modulation formats such as QPSK and 16QAM.
Organic materials combined with strongly-guiding silicon waveguides have led to a new generation of low-power, high-speed linear-electro optic modulators. In this paper we review the so-called silicon-organic hybrid approach and the more recent plasmonic successor.
We demonstrate 16QAM and QPSK modulation at symbol rates of 40 GBd and 45 GBd using a silicon-based IQ modulator. The device enables data rates up to 160 Gbit/s in a single polarization with an estimated energy consumption of 120fJ/bit.
Silicon modulators fabricated by scalable, established CMOS technology, promise an answer to today's power consumption challenges. With advanced modulation formats and the resulting higher spectral efficiencies, long-haul applications for silicon modulators come into reach. Energy efficient, high speed modulators were demonstrated as resonant [1] and non-resonant [2] devices. A single-carrier single-polarization...
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