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We report enhancement-mode $\beta $ -Ga2O3 (BGO) MOSFETs on a Si-doped homoepitaxial channel grown by molecular beam epitaxy. A gate recess process is used to partially remove the epitaxial channel under the 1-$\mu \text{m}$ gated region to fully deplete at ${V}_{\textsf {GS}}= 0$ V. BGO MOSFETs achieve drain current density near 40 mA/mm and ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ...
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of β-Ga2O3. MOSFETs formed by homoepitaxial growth of β-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation >...
As a transparent conducting oxide with a large bandgap of ∼4.9 eV and associated large estimated critical electric field (Ec) strength of 8 MV/cm, β-Ga2O3 (BGO) has been touted for its tremendous potential as a power switch. Power switch metrics such as Baliga's figure of merit (BFOM) estimating dc conduction losses and Huang's material figure of merit (HMFOM) incorporating dynamic switching losses...
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