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Simultaneous switching noise (SSN) is caused by the simultaneous switching of a group of I/O drivers, and is proportional to the total inductance and the rate of change of the switching current. This often leads to signal distortion and degradation of signal and power integrity of systems. Furthermore, with the continuously decreasing operating voltage, susceptibility to SSN keeps on increasing and...
Simultaneous switching current (SSC) drawn by integrated circuits (ICs) creates simultaneous switching noise (SSN) on power nets, which causes a number of SI/PI problems, such as reduced noise margin and eye opening with increased SSN. Analyzing the effects of SSC and SSN is especially important for ICs targeted for mobile applications whose operating frequency keeps on increasing with decreasing...
In this study, magnetically coupled coil design for high efficiency wireless power transfer (WPT) in PCB-toactive silicon (Si) interposer is proposed and analyzed using Z-parameter analysis. For strong magnetic coupling between transmitter (Tx) coil on PCB and receiver (Rx) coil on Si-interposer, each coil structure is selected considering process dimension difference between PCB and Si-interposer...
In this study, a Wireless Power Transfer (WPT) system design on active silicon (Si) interposer for low voltage applications in 3D-IC is proposed. The proposed WPT system includes magnetically coupled coils, a full-bridge rectifier, and a voltage regulator. In order to validate the proposed system, we first design all of the system components. First, we design a three dimensional helix-type transmitter...
A simultaneous switching current (SSC) drawn by an integrated circuit (IC) creates simultaneous switching noise on power nets, which in turn causes jitters in the I/O signals and reduces the maximum clock frequency. For a thorough analysis of high-speed ICs, there is a dire need to measure currents at specific power pins of the ICs. In this paper, a novel magnetically coupled embedded current probing...
Motivated by the abrupt miniaturization of mobile devices and demand for 3D-IC, Through Silicon Via (TSV) has been highlighted as the key technology for compactly integrating multiple dies of various functions as a whole system. With dramatic growth in the number of TSVs in TSV-based 3D-IC, a need for accurate detection of TSV disconnection defects arose, to compensate for the instability in the TSV...
With the advent of 3D-IC, Through Silicon Via (TSV) has been highlighted as the key technology for compactly integrating dies of various functions. However, due to the instability in the TSV fabrication process, various types of failure can be resulted, resulting in drastic decrease in the final chip yield with the increase in the number of TSVs and stacked dies. In this paper, we propose a novel...
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