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This paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 °C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand...
A novel charge-recycling scheme has been designed and implemented to demonstrate the feasibility of operating digital circuits using the charge scavenged from the leakage and dynamic load currents inherent to digital logic. The proposed scheme uses capacitors to efficiently recover the ground-bound charge and to subsequently boost the capacitor voltage to power up the source circuit. This recycling...
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