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In this study, design considerations of gate driver for silicon carbide (SiC) power devices is discussed. The work is focused in minimizing the common-mode current injection into the control circuit, thereby adapting the gate circuit to operate at higher dv/dt of fast switching transients. By reducing the common-mode interference with the control circuit, the signal integrity can be increased, spurious...
The body diodes of 10kV SiC MOSFETs can be used as anti-parallel diodes in medium voltage converters instead of widely used SiC JBS and PiN diodes. Characterization of switching loss of the body diodes is required to evaluate its candidature for replacement of JBS/PiN diodes. Normally, double pulse test setup is used to observe the reverse recovery behavior of the diodes. But, in high voltage diodes,...
In this paper, a novel technique is proposed to extend the region of zero voltage switching (ZVS) of a dual active bridge (DAB) dc–dc converter using an auxiliary series injection transformer. The series voltage injection by the series transformer helps us to maintain ZVS by controlling the reactive power flow through the main converter of the DAB. A model for the series compensation is developed...
The 15kV SiC IGBT (2 μm buffer layer) with chip area of 8.4 × 8.4 mm2 is the state of the art high voltage device designed by Cree Inc. This device is expected to increase the power density of converters and the demonstration of the device in applications like Solid State Transformers has been published. Therefore, it is interesting to investigate the performance of the device in very high voltage...
The low voltage SiC (Silicon carbide) MOSFET (1.2 kV to 1.7 kV) increases the switching frequency limits of a power electronic converter several folds compared to low voltage Si IGBTs. Significant increase in efficiency and power density of voltage source converters can be achieved. However, for medium-voltage high-power converter applications Silicon (Si) devices (4.5 kV and 6.5 kV IGBT) are still...
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