The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents an X-band high gain and high power three-stage PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA). Based on 0.15-μm GaAs power PHEMT technology, this PA is fabricated on a 2-mil thick wafer. While operating under 7.2 V and 3300 mA dc bias condition, the characteristics of 29.2-dB small signal gain, 11.7-W output power, and 42.2% power added efficiency at...
This paper presents a passive planar balanced mixer for 94 GHz applications, based on a commercial 0.1 um GaAs pHEMT technology from WIN Semi. Corp. This mixer shows a single-ended output comversion loss between 9 dB and 11 dB pumped with a 10 dBm LO signal at 94 GHz and a RF input 1dB compression point around 0 dBm. In this design, a Lange plus a 90 degrees electrical length microstrip line is adopted...
This paper demonstrates an active single-balanced mixer with InP double heterojunction bipolar transistor (DHBT) process for direct down-conversion system at 89 GHz. Authors use Coplanar Waveguide (CPW) as on-chip transmission line and tune an on-chip CPW balun to allocate LO signal to the switch cell. Benefiting from its balanced structure, this mixer shows a LO port to RF port isolation above 20...
This letter presents a broadband monolithically integrated waveguide transition module designed for operating around 300 GHz. This transition module employs waveguide WR2.8 and utilizes dipole-based transitions from waveguide to CPWG. The dipole-based transition is designed and fabricated using InP terahertz monolithic integrated circuit (TMIC) technology, so as to be directly integrated monolithically...
A method for loop circuit stability analysis is introduced through investigating its closed-loop admittance and open-loop impedance. This method has wider adaptability and less limitation than the traditional approach which uses open-loop power-wave transfer function. A 6-GHz HBT oscillator is designed to verify this method. The measurement result shows the effeteness of the proposed method while...
This paper presents an initial design of a single-ended gate mixer in self-developed InP High Electron Mobility Transistor (HEMT) technology and its critical parameters measured from 75 GHz to 110 GHz. This mixer realizes a fair conversion loss between 8 dB to 14 dB in full W-Band both in up and down conversion mode, and a 1-dB input compression points more than 0 dBm with the LO pumped at 89 GHz...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.