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A broadband FET resistive mixer MMIC on GaAs substrate is described in this paper. A non-linear model of MESFET operating in passive mode (Vds=0V) developed for design and simulation of mixer has also been analyzed. Measured mixer results match closely with the simulations based on the developed model. The on-chip broadband spiral baluns delivered wide frequency range from 230 MHz to 1.8 GHz while...
This paper presents the design and development of a compact C-band down converter realized in a 12mm×12mm surface mount metal ceramic package. The size reduction has been achieved by development of compact sized MMIC components required for the receiver, viz., a double balanced mixer, a voltage controlled oscillator with on-chip varactor and RF and IF amplifiers. All the MMICs have been designed and...
Monolithic microwave integrated circuits (MMICs) play an important part in today’s wireless communication electronics. GaAs-based pseudomorphic High Electron Mobility Transistor (pHEMT) is used in MMIC-based low noise amplifier (LNA) and power amplifier (PA) stages. The latter requires high device current (I ds ) and high reverse breakdown voltage (BV gd ). In addition, the ON-state...
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