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Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at -1 V. These Ge photodiodes have potential for monolithic integration with other Si photonic components.
Low dark current of ~10 mA/cm2 by inserting i-Si in as-grown Ge pin photodiodes is dominated by the carrier generation in wider-gap i-Si. This property is useful for photodiode applications of defective Ge prepared at low temperatures.
Responsivity spectra are measured for p-Ge/i-Si/n-Si diodes favorable for the high-frequency operation. In spite of thin (90 nm) p-Ge absorption layer, free-space responsivities of ~10 mA/W are obtained, corresponding to the internal quantum efficiency as large as 20%.
We demonstrated as-grown Ge p-i-n photodiode on Si with low dark current (~10 mA/cm2) and comparable responsivity. Such a low temperature fabrication is crucial to realize ldquobackendrdquo process for Ge integration in Si photonics.
We demonstrated vertical Ge p-i-n photodiodes on an SOI substrate by selective epitaxial growth. It is strongly suggested from the spectral responsivity that strain in selective Ge mesas would be relieved because of a small and stripe shape of Ge mesas.
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