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TSV has emerged as a promising technique for three dimensional packaging. Square TSV is employed for some special type SRAM and DRAM memories, which are usually fabricated at individual advanced IC foundries. The profile- preserving property are usually very important and there is close relationship between the related process condition and the profile-preserving property. In this paper, parametric...
In this paper, a novel petaloid hollow Cu interconnection for interposer is presented, its stress can be released by free ends face to hollow Cu interconnection center, and its fabrication process for Si substrate and glass substrate are also presented. Stress distribution and Max. stress of interposer with petaloid hollow Cu interconnection comparison with normal TSV is simulated and analyzed by...
In this paper, a thick TSV interposer with integrated inductor, micro-strip and coplanar waveguides(CPW) transmission lines on high resistivity Si substrate is presented for 2.5 D integration of RF devices. The electrical interconnection through Si interposer is realized by two individual pieces of holly Cu TSVs of different diameters assembled at the axis. Metallization is realized with a redistribution...
In this paper, a novel Si interposer for hermetical MEMS oriented System-in-Package application is presented and it is a low stress, scalable platform with a stress releasing function. It's composed of Si posts which are Air-gapped from Si interposer substituting traditional Copper TSVs to function as electrical interconnection paths, re-distribution layer (RDL) and landing pads for chip stacking...
Through silicon via (TSV) is one of the most significant techniques in microelectronic packaging. In 3 dimensional integrated circuit (3D IC), TSV brings great performance improvement and high density device integration. Meanwhile, the usage of copper in TSV causes serious thermal stress issue, which considerably affects the device performance and reliability. This paper proposed a unique structure...
As multiple layers of planar device are stacked to alleviate signal delay problem and reduce chip area, Through silicon via (TSV) is introduced to replace the large number of long interconnects needed in previous 2D structure. However, the thermal-mechanical reliability problems of TSVs, such as interfacial delamination, via cracking and so on, have become a serious reliability concern. In this paper,...
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