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We investigate factors affecting device performance of deep-etched InAs/GaAs quantum-dot ridge-lasers grown directly on silicon substrates, emitting close to 1.3-μm. Continuous-wave reliability measurements show there is a significant reduction in degradation, in terms of threshold current and slope efficiency, as the cavity length is increased.
We report on 1.3-µm emitting InAs/GaAs quantum-dot ridge lasers grown directly on a silicon substrate. Using an optimised dislocation filter design, continuous-wave operation is achieved with power outputs exceeding 20-mW and operation up to 39°C.
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