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In this paper, we investigate the electron mobility in nanowire (NW) FETs operating under quasi-ballistic conditions. Starting from a general expression of the current-voltage characteristics worked out in a previous work, we determine the limiting current at low drain voltage and find the functional dependence of the carrier mobility versus device and gate lengths, barrier height, and momentum-relaxation...
This work presents a theoretical analysis, validated by numerical simulations, of the vertical LOCOS DMOS structure. New analytical models of the specific on-state resistance and breakdown voltage are developed, which improve upon previous models in that an explicit dependence on device geometry and impurity concentration is worked out. The model accounts for the space charge due to the lateral and...
In this work we investigate the electron mobility in nanowire FETs operating under quasi-ballistic conditions. Starting from a general expression of the current-voltage characteristics worked out in a previous paper, we extract the drain current at vanishingly-low drain voltages and find the functional dependence of the effective mobility on the device length, the mean-free path and the barrier height...
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