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Silicon carbide (SiC) is a well-known material in the field of high temperature and high voltage electronics thanks to a high thermal conductivity, high electric field breakdown strength and high maximum current density [1]. Simultaneously with a strong inertness and a low thermal expansion, this makes silicon carbide a good material for extreme condition sensing [2]. The fact that the cubic structure...
Photonic devices operating in the mid-IR (3 μm to 13μm wavelength range) are of great interest for a wide range of applications, such as free-space communications, environmental monitoring or defence. Group IV-based material platforms [1], such as silicon-on-insulator (SOI)[2] and silicon-on-sapphire (SOS)[3] have attracted significant interest for mid-IR integrated photonics. However, absorption...
There is a growing interest in generating mid-infrared (mid-IR) supercontinuum (SCG) using CMOS compatible platforms for applications such as, optical coherence tomography and molecular spectroscopy [1, 2]. SCG spanning from the telecom band to the SWIR (< 3 μm) has already been achieved using silicon-based platforms such as silicon-on-insulator, silicon nitride-on-insulator and silicon-germanium-on-insulator...
We present fabrication, simulation and characterization of silicon carbide microdisk on silicon pillar aiming at non-linear operation from near-infrared to mid-infrared. We report experimental Q factor of 1800 at telecom wavelength.
We demonstrate an octave spanning, 1.9–6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. This establishes SOS as a promising new platform for integrated nonlinear photonics in the mid-IR.
We demonstrate an octave spanning, 1.9–6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.
We demonstrate a silicon chip based all-optical device capable of providing single shot time-domain measurements of picosecond pulses near λ=1550nm. The 96µm long device relies on optical third harmonic generation between two pulses in a slow light photonic crystal waveguide.
We report the characterization of correlated photon pairs generated in dispersion-engineered silicon slow-light photonic crystal waveguides pumped by picosecond pulses. We found that taking advantage of the 15-nm flat-band slow-light window /30), the bandwidth for correlated photon-pair generation in 96- and 196-m-long waveguides was at least 11.2 nm, while a 396-m-long waveguide...
We demonstrate a silicon chip-based all-optical device providing single shot time-domain measurements of picosecond pulses near X=1550nm. The auto-correlation visible signal arises from third-harmonic generation in a 96 μm long slow light photonic crystal waveguide.
We report the improvement and noise analysis of correlated photon-pair generation in an ultra-compact 96 µm long dispersion-engineered silicon slow-light photonic crystal waveguide pumped by picosecond pulses. The key metrics for a photon-pair source: coincidence to accidental ratio (CAR) and pair brightness were measured to be a maximum 27 at a pair generation rate of 0.002 pair per pulse. We performed...
Nonlinear optical processes utilizing the ultrafast Kerr (χ(3)) nonlinearity provide a tool to manipulate short, picosecond long optical pulses [1], of interest for high baud rate serial communications. Increasing the nonlinear response of waveguides allows for more compact and potentially more efficient all-optical devices, with many device demonstrations in high index, highly nonlinear materials,...
We report third-harmonic generation in slow-light photonic crystal waveguides realized in chalcogenide glass membranes. This material enables a more uniform conversion along the waveguide and a higher efficiency than in comparable silicon structures.
We generate correlated photon pairs in the telecom band from an 80 μm long dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow light propagation.
We present results showing the formation and evolution of a photonic crystal cavity during writing by selective optical exposure in a photosensitive chalcogenide photonic crystal. Q-factors of up to 125,000 were obtained in these cavities.
We demonstrate reconfigurable microfluidic photonic crystal double-heterostructure cavities by local fluid infiltration of select air holes. Properties of the microfluidic cavities are experimentally studied by evanescent coupling and analyzed by numerical simulations.
We report the manufacturing and optical characterization of microsphere in chalcogenide. We show that high-Q modes of a 9.2 mm diameter chalcogenide glass can be efficiently excited using a silica tapered fiber.
All-optical switching devices are based on a material possessing a nonlinear optical response, enabling light to control light, and are enjoying renewed interest. Photonic crystals are a promising platform for realizing compact all-optical switches operating at very low power and integrated on an optical integrated circuit. In this review, we show that by making photonic crystals from a highly nonlinear...
We demonstrate highly efficient evanescent coupling via a silica loop-nanowire, to ultra-small quantum-dot photonic-crystal cavities. It enables the tuning of both the Q-factor and the wavelength of the cavity mode independently.
We demonstrate efficient coupling via a tapered silica nanowire micro-loop to a photonic crystal based nanocavity containing quantum dots, specifically designed for single photon source applications
We demonstrate efficient coupling via a tapered silica nanowire micro-loop, to a photonic crystal based nanocavity containing quantum dots, specifically designed for single photon source applications.
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