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Nanoscale 3D-integrated Application Specific ICs (N3ASICs) [1], a computing fabric based on semiconductor nanowire grids, is targeted as a scalable alternative to end-of-the-line CMOS. In contrast to device-centric approaches like CMOS, N3ASIC design choices across device, circuit and architecture levels are geared towards reducing manufacturing requirements while focusing on overall benefits. In...
Parameter variations caused by manufacturing imprecision at the nanoscale are expected to cause large deviations in electrical characteristics of emerging nanodevices and nano-fabrics leading to performance deterioration and yield loss. Parameter variation is typically addressed pre-fabrication, with circuit design targeting worst-case timing scenarios. By contrast, if variation is estimated post-manufacturing,...
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