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This paper analyses RF substrate losses and non-linearity on Si-based substrates. Through measurements it is shown that trap-rich high resistivity silicon and porous silicon substrates are virtually lossless up to 120°C. Although, RF losses and CPW attenuation increases with temperature on both Si-based solutions, they remain acceptable for high temperature RF applications. Porous locally grown silicon...
Thick porous Si layers locally formed on a low resistivity Si wafer were studied for their application in on-chip RF device integration. A comparison was made between the above porous Si substrate and trap-rich high resistivity Si (trap-rich HR Si), which constitutes a state-of-the-art substrate for RF integration, by integrating identical co-planar waveguide transmission liness (CPW TLines) on both...
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