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An electrically tunable band-pass filter based on engineered substrate with patterned Permalloy (Py) thin film has been designed and characterized. The band-pass filter is designed with metamaterial resonators to achive a compact size; the designed filter is fabricated on a multi-layered engineered substrate which composes a layer of liquid crystal polymer, a layer of patterned Py thin film, and silicon...
We fabricated the single-crystalline Ge (sc-Ge) p-channel thin-film transistors (TFTs) with Schottky-barrier source/drain (S/D) on flexible polyimide substrates by a simplified low-temperature process (≤ 250°C), which preserves the high mobility Ge channel. Adhesive wafer bonding and Smart-Cut techniques were utilized to transfer the sc-Ge thin film onto polyimide substrates. The device has a linear...
The characteristics of Si0.2Ge0.8 channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0.2Ge0.8 (110) PFET are enhanced by 70% and by 80% for the <110> channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe <110>/(110) PFET has ~ 200% hole mobility enhancement...
Nickel germanides was formed on crystalline n-Ge (100) substrate by conventional RTA annealing at temperatures ranging from 300??C to 600??C. The XRD result reveals that only the NiGe phase is observed during this process temperature range. The orthorhombic structure of NiGe also induces epitaxial tensile strain on Ge substrate (i.e., NiGe itself is compressively strained) due to the difference in...
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