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Epsilon-near-zero materials provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The nonresonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting...
We demonstrate high-speed operation of ultracompact electroabsorption modulators based on epsilon-near-zero confinement in indium oxide (In2O3) on silicon using field-effect carrier density tuning. Additionally, we discuss strategies to enhance modulator performance and reduce confinement-related losses by introducing high-mobility conducting oxides such as cadmium oxide (CdO).
We report the first high-speed demonstration of a compact electroabsorption modulator based on epsilon-near-zero confinement in conducting oxide films. The non-resonant, 4μm-long device operates simultaneously over the entire C band through field-effect carrier density tuning.
We describe the development and frequency instability measurements of a highly miniaturized, buffer gas cooled, trapped-ion atomic clock. The clock utilizes the 12.6 GHz hyperfine transition of the 171Yb+ ion. A custom-built 3 cm3 vacuum package containing the ion trap is integrated with other key elements of the atomic frequency standard, including a photo multiplier tube, miniaturized laser sources...
The energy-per-bit consumption of VCSEL-based optical interconnects has fallen steadily over the years. The basis for continuing this trend will be discussed by examining improvements in component technologies: VCSELs, photodiodes, and integrated circuits.
We demonstrate high-speed switching of a symmetric self-electrooptic effect device (S-SEED) operating at 1550 nm. Transitions faster than 10 ps are observed, verifying the suitability of this technology for integrated logic operations beyond 40 GHz.
The next generation 850 nm datacom VCSEL to go into production will be the 17 G VCSEL. It is not certain that direct modulation will be suitable given the reliability, supply voltage, and temperature range required. This paper is a first look at VCSELs designed and targeted for production 17 G use. The design is discussed and LIV and small signal frequency response is presented.
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