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An ultra-thin thermally-grown GaOxNy was formed between deposited SiO2 dielectric and GaN wafer to improve the interface quality. The interface-trap density at 0.4 eV below the conduction-band edge was reduced by one order compared with that of a sample without the stacked GaOxNy. NO annealing was conducted on both SiO2/ GaN and SiO2/GaOxNy/GaN MIS structures, and turned out to effectively suppress...
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