The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We developed high-density silicon-photonics multichannel receiver and demonstrated 12ch × 25 Gb/s error-free operations at the bit-error-rate of < 1E-12 for the pseudo random binary sequence (PRBS) of 231−1 signals. Carefully designed high power integrity successfully led to very small crosstalk penalty of 1.2 dB under the simultaneous operation at all 12 channels.
We propose a high-dense integrated silicon photonics transmitter and receiver with a novel bridge structure for on-package optical interconnects. We verified an error-free operation of 25 Gbps between developed transmitter and receiver with a power efficiency of 9.6 mW/Gbps.
We present a novel configuration of hybrid-integrated silicon photonic interconnects employing a bridge structure, and demonstrate 25 Gbps error-free operation between transmitter and receiver with power efficiency of 9.6 mW/Gbps including a serializer chip.
Integrated photonic interconnect technology is free from the bandwidth-distance limitation that intrinsically exists in electrical interconnects, promising a disruptive alternative for next-generation scalable data centers. Silicon photonic platforms have been reported based on monolithic and hybrid integration. Monolithic systems mitigate integration overhead but require compromise in either electronic...
Diethylselenide [(C 2 H 5 ) 2 Se: DESe] was shown to be a promising less-hazardous alternative source for the preparation of CuInSe 2 films for solar cell applications by the selenization of Cu-In and Cu-In-O precursors. Approximately 1.5μm thick, single-phase, polycrystalline CuInSe 2 films having grain size of approximately 1-2μm were formed on Mo-coated soda-lime...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.