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Methods for detecting contamination with native transistor probes are reviewed. This review is based on experience which was accumulated during development of multilevel epitaxial (EPI) high voltage DMOS process technologies including Deep Trench Isolation (DTI) with isolation capabilities up to and above 100V. Potential contamination sources, mechanisms and characterization are critically discussed...
Methods for detecting contamination with native transistor probes are reviewed. This review is based on experience which was accumulated during development of multi-level epitaxial (EPI) high voltage DMOS process technologies including Deep Trench Isolation (DTI) with isolation capabilities up to and above 100V. Potential contamination sources, mechanisms and characterization are critically discussed...
Metal–insulator–insulator–metal (MIIM) capacitors with bilayers of Al2O3 and SiO2 are deposited at 200 °C via plasma enhanced atomic layer deposition. Employing the cancelling effect between the positive quadratic voltage coefficient of capacitance ($\alpha $ VCC) of Al2O3 and the negative $\alpha $ VCC of SiO2, devices are made that simultaneously meet the International Technology Roadmap for Semiconductors...
This paper presents the challenges of integrating 70V and 45V lateral DMOS transistor modules into a 0.18um base line process. This integration is achieved with minimal impact on baseline process and circuit IP's. Multi-epitaxial stack and Deep Trench Isolation (DTI) modules assure up to 140V isolation capability between different areas in the chip.
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