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Three types of defects, namely comet I, comet II and carrot, in thick 4H-SiC homoepilayer were investigated by the micro-Raman scattering measurements. Comet defects were originated from certain cores which caused by the point defects or the inclusions on the surface of the substrate. 3C-SiC inclusions, which were not contained in carrot, were found in comet defects. The different distribution of...
High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8?? off-oriented substrates in the size of 10 mm ?? 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were...
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