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We fabricated a single hole quantum dot on a AlGaAs/GaAs heterostructure with no intentional doping. The hole quantum dot shows varying charging energy and clear excited states, which suggests that it is in the last-few-hole regime. By changing the confinement of the barrier gates, the device can also be defined as a double quantum dot with tunable interdot coupling.
In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable...
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