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Very high mobility of 149∼189 cm2/Vs, large on-to-off current ratio (ION/IOff) of >7 orders of magnitude, fast turn-on sub-threshold swing of 110 mV/decade, and low power operation at 2∼2.5 V were achieved in SnO2 TFT device at an ultra-thin SnO2 thickness of 4.5 nm. The device mobility of SnO2 TFT is higher than the best ZnO-based TFTs and CVD-grown multi-layers MoS2 MOSFETs. The reached mobility...
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