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Emerging non-volatile memory (NVM) technologies are getting mature in recent years. These emerging NVM technologies have demonstrated great potentials for the universal memory hierarchy design. Among all the technology candidates, resistive random-access memory (RRAM) is considered to be the most promising as it operates faster than phase-change memory (PCRAM), and it has simpler and smaller cell...
System-in-Package (SiP) and 3D integration are promising technologies to bring more memory onto a microprocessor package to mitigate the "memory wall" problem. In this paper, instead of using them to build caches, we study a heterogenous main memory using both on- and off-package memories providing both fast and high-bandwidth on-package accesses and expandable and low-cost commodity off-package...
Phase change memory (PCM) is one of the most promising technology among emerging non-volatile random access memory technologies. Implementing a cache memory using PCM provides many benefits such as high density, non-volatility, low leakage power, and high immunity to soft error. However, its disadvantages such as high write latency, high write energy, and limited write endurance prevent it from being...
Phase-change random access memory (PCRAM) is an emerging memory technology with attractive features, such as fast read access, high density, and non-volatility. Because of these attractive properties, PCRAM is regarded as a promising candidate for future universal memories, and system-level designers could open up new design opportunities by leveraging this new memory technology. However, the majority...
Magnetic random access memory (MRAM) has been considered as a promising memory technology due to many attractive properties. Integrating MRAM with CMOS logic may incur extra manufacture cost, due to its hybrid magnetic-CMOS fabrication process. Stacking MRAM on top of CMOS logics using 3D integration is a way to minimize this cost overhead. In this paper, we discuss the circuit design issues for MRAM,...
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