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Dynamic charging effects have large impact on power, PAE of power amplifiers. When simulating a Power amplifier with InGaP-GaAs HBTs, modeling often fails to predict well a higher PAE at high power density region, unless some parameter sets to unreasonable value. This has been a controversial issue and could not correctly modeled by existing commercial available HBT models. We present a novel time-...
A very compact InP-Based 16-channel O-CDMA encoder-/decoder chip (3.8 mm x 6.8 mm) has been designed, fabricated and characterized. The device successfully performs O-CDMA spectral encoding.
A frequency divider with super-dynamic D-type flip-flop is demonstrated in 2 μm GalnP/GaAs HBT (fT = 40 GHz) technology. By biasing the HBT devices around tire peak transit-time frequency (fT), the operating frequency of a D-FF with ECNFP (emitter-coupled negative feedback pairs) can be improved. At a supply voltage of 5 y a divide-by-two function of 9.5 GHz is achieved.
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