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Due to its wide bandgap, 4H-SiC is a potential candidate for developing devices capable to operate at elevated temperatures. Nowadays there is an increasing demand for high temperature circuits for drivers of SiC switches applicable to intelligent power management, automotive industry, intelligent sensors for harsh environment, space and aerospace among others. This paper is presenting high temperature...
Silicon carbide MESFETs are very attractive devices for high frequency applications, and communications. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications. SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature (HT) and/or in harsh environments. An...
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