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The effects of lifetime engineering processes in fast recovery power diodes are measured by using an internal IR-laser deflection (IIR-LD) set-up. To evidence the local lifetime killing effects on such devices, a comparison between the measured physical parameters of irradiated and unirradiated diodes, free-carrier concentration and their decay time, is performed. A reduction of free-carrier concentration...
This article addresses the design of an optimal cell suitable for 6.5 kV Insulated Gate Bipolar Transistor (IGBTs). Simulations of the layout optimisation and process technology considerations for the 6.5 kV IGBT basic cell are presented. The simulation led directly to a monitor chip with several variant IGBT test structures, which has been fabricated and characterised. As a result, a large area 6...
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