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Gate-All-Around (GAA) nanowire architecture is aimed to represent the ultimate integration for MOSFET up to dimensions of several nanometers. Very thin nanowires (<; 5 nm) are expected to be used in these ultimate devices, for which a new physical phenomenon emerges: the modification of the band structure compared to bulk silicon, which changes the conduction properties and affects the device characteristics...
We address the use of the tight-binding and effective mass approximations (TB and EMA) for the calculation of transport properties in silicon nanowires (SiNWs). Three different transport scenarios are considered within a non-equilibrium Green's function approach: ballistic transport, tunneling under a potential barrier, and transport through a potential well. In the first two cases TB and EMA provide...
We discuss atomistic approaches to quantum transport within the semi-empirical tight-binding framework. We show that the latter is well suited to the study of present nanostructures such as carbon nanotubes, semiconductor nanowires and graphene. It indeed provides a very good balance between accuracy and efficiency, and can be coupled with ab initio methods to upscale the calculations to the mesoscopic...
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