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In this paper we have examined the back-bias effect and its influence on Hall microsensor's behavior, which is manufactured on 0,18 µm CMOS technology. Then the sensor's parametric reliability was tested at the temperature range of −40°C to +150°C. The purpose of the constructed Hall cell is to improve sensor's characteristics, achieving high sensitivity with minimal parasitic offset effects.
The requirements for precision integrated sensors are constantly increasing and the new techniques in the circuit design are of great importance. In this paper a new technology approved Hall effect microsensors are presented, which experimentally prove improved sensor's characteristics.
The reliable operation of LED modules is toughly dependent on structural and technology solutions as well as on numerous natural and operational phenomena that impede thermal control. In the paper, various applications of InfraRed Thermography (IRT) for ensuring thermal robustness of LED modules are examined. Experimental data from IRT measurements of LED modules at different stages of pre-service...
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