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For advance CMOS device manufacturing, HALO implant with high tilt angles (30–45°) and 4-rotational condition has become one of the critical implant steps defining device properties. However, from Ion Implanter tool hardware point of view, the rotation mechanism function is not able to be monitored or verified to be accurate. A failure to rotate will not generate any tool error on traditional implanter...
The Viista80 High Current Series Ion Implanter improved the production throughput by a high power beam density Implant. However, the high dose rate implant created an undesirable variation in Poly Resistance within the wafers. The un-uniform poly resistor will lead to a bad device matching and particularly sensitive in analog circuit design. This paper introduces a Design of Experiments (DOE) tuning...
The fast scanning mechanism of High Current batch Implanter is achieved by spinning the wafer disk with angular speed more than 1200 Rotation-Per-Minute (RPM). If particles hit device wafers during implant it can cause serious damage to device structure. Particle generation areas are mainly from Source terminal, Accelerator Column, Plasma Flood Gun (PFG) and beam line wall. Preventive maintenance...
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