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In this study, the required heat transfer coefficient of heat sink is quantitatively shown by steady heat conduction simulation. Maximum principal stress of silicon and equivalent stress of the TSV are obtained from thermal stress simulation.
The relation between maximum temperature in Si chip and varied heat transfer coefficients of heat sink is shown in Fig. 5. Maximum temperature for device operation was assumed to be 85 °C. Heat transfer coefficient of heat sink at device operation is estimated to be 4.5W/m2K by quadratic approximation of least square method. Maximum temperature of 3D SiP was almost 85 °C and uniform temperature distribution.
The thermo-mechanical reliability of stacked die structures is a critical issue in 3D packaging. The assessment of the stress and the warpage of silicon dies in 3D stacked structures become important in achieving low-stress and low-warpage 3D packaging. However the parametric analyses of thermal stress and die-warpage by rigorous finite element analysis can be time consuming for 3D systems, since...
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