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In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm. 1×10 19 cm −3 n-type channel doping, 5–20nm Si nanowire width together with 2nm SiO 2 gate oxide thickness were used in the quasistationary TCAD device simulations of 100nm long channel...
In this paper, we report for the first time, assessment on mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless (JL) nMOSFETs with cross-section down to 5 nm. This analysis was performed in accumulation regime, as a first step, addressing bias-dependency of various key MOSFET parameters (e.g. series resistance, channel width and gate-channel capacitance), non-uniform...
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