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We demonstrate single-wavelength, serial and real-time 100 Gb/s NRZ-OOK transmission over 500 m SSMF with a GeSi EAM implemented on a silicon photonics platform. The device was driven with 2 Vpp without 50 Ω termination, allowing a low-complexity solution for 400 GbE short-reach optical interconnects.
Recent advances in integrated opto-electronic devices and front end circuits have made it possible to efficiently transmit very high data rates over optical links for HPC/datacenter applications. This paper reviews our current progress towards serial 100-Gb/s optical interconnects, with emphasis on electrical duobinary (EDB) modulation.
100 Gbit/s three-level (50 Gbit/s OOK) signals are generated using a silicon-organic hybrid modulator and a BiCMOS duobinary driver IC at a BER of 8.5×10−5(<10−2). We demonstrate dispersion-compensated transmission over 5 km.
We demonstrate the first real-time, serial 100 Gb/s NRZ-OOK transmission with an integrated GeSi EAM implemented on a silicon photonics platform. Transmission over 500m of SSMF and 2 km of dispersion shifted fiber is presented.
The increasing demand for bandwidth fuels the development towards high data rate electrical serial links. These links generally suffer from considerable frequency-dependent loss, introducing the need for equalisation at 10 Gbit/s and higher. Modulation schemes with improved spectral efficiency, with respect to non-retrun to zero (NRZ), combined with feed-forward equalisation (FFE), allow increasing...
An ultra-low power SiGe BiCMOS IC for driving a 10 channel EAM array at 113 Gb/s is presented for WDM-PON applications. The driver array consumes only 2.2 W or 220 mW per channel, 50% below the state of the art.
A new diode string based ESD device is proposed. This device, realised in a 0.13 μm SiGe BiCMOS process, features a reduced clamping voltage compared to a conventional diode string topology. The addition of extra stages improves the relative reduction in clamping voltage of the device further and, as for a regular diode string, reduces the parasitic capacitance of the device. Hence the proposed circuit...
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