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We have investigated the effects of the tri-gate channel structure on electrical properties of extremely thin-body (ETB) InAs-on-insulator $(-{\rm OI})$ MOSFETs. It was found that the tri-gate structure provides significant improvement in short channel effect (SCE) control even in ETB-OI MOSFETs by the simulation. We have fabricated and demonstrated tri-gate InAs-OI MOSFETs with fin width of the...
It has been well recognized that new device engineering is indispensable in overcoming difficulties of advanced CMOS and realizing high performance LSIs under 10 nm regime. According to the future evolution scenario of CMOS device/process technologies presented in the International Technology Roadmap for Semiconductors (ITRS) 2010 edition [1], new channel materials with enhanced carrier transport...
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