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Semiconductor devices and packages have firmly moved in to an era where scaling is driven by 3D architectures. However, most of the metrology and inspection technologies in use today were developed for 2D devices and are inadequate to deal with 3D structures. An additional complication is the need for specific structural and defect information that may be buried deep within a 3D structure. We present...
In this paper, we describe the novel technique of using leading edge X-ray microscopy (XRM) technology to replace physical cross-sectioning in failure analysis (FA) and 3-dimensional integrated circuit (3DIC) process development. Contrary to general consensus that 3D X-ray is too slow, we explain how XRM can be used to obtain high quality cross-section images within 5–300min per measurement depending...
In this paper, we describe the novel technique of using leading edge X-Ray Microscopy (XRM) technology to replace physical cross-sectioning in Failure Analysis (FA) and 3-Dimensional Integrated Circuit (3DIC) process development. Contrary to general consensus that 3D X-Ray is too slow, we explain how XRM can be used to obtain high quality cross-section images within 5–300min per measurement depending...
Several of the critical drawbacks to existing failure analysis imaging techniques, including the low resolution of common non-destructive techniques and the destructiveness and slow speed of FIB/SEM, can be resolved by using X-Ray Micro Computed Tomography (MicroCT) as a complementary technique. In this the paper, we describe examples of the use of X-Ray MicroCT following TDR as non-destructive technique...
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