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In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation...
This paper presents a complex permittivity sensor, integrated in 40-nm CMOS, for microwave dielectric spectroscopy. It utilizes a single-ended patch as a near-field sensing element, embedded in a double-balanced, fully-differential impedance bridge. A low-IF, multi-harmonic down-conversion scheme is employed to extend the characterization frequency range and increase the measurement speed. The implemented...
Within an LDMOS high-power device, the identical and parallel transistor cells operate under different conditions due to uneven distributed thermal and loading effects. This degrades device performance and increases the risk of odd-mode oscillations. This paper demonstrates an EM-model-assisted non-intrusive near-field technique to characterize, in situ, distributed effects. We apply the proposed...
High frequency power devices require specific loading conditions to provide maximum output power, operate efficiently and avoid self-destruction. In applications with unknown or time varying loading conditions it is therefore desirable to monitor, in-situ, the loading conditions offered to the PA. This work proposes an ultra-compact six-port package-integratable reflectometer. The resulting structure...
In this work, a non-intrusive near-field technique is applied to enable the characterization of active device interactions in a 2.2-GHz 400-W LDMOS Doherty power amplifier (PA). Using the proposed technique, the individual behaviors of interacting power devices in a high-efficiency PA, in terms of their inter-dependent drain voltages, currents, power, efficiency and loading impedance, are experimentally...
A high-power class-E Chireix outphasing RF power amplifier integrated inside a transistor package is described. The optimum class-E loading conditions and the Chireix compensation elements are provided to the active devices by a dedicated ultra-low loss bondwire-based transformer power combiner that enables a very small form factor and low cost. The realized prototype achieves 70.6 W peak power with...
For wireless infrastructure applications, package-integrated power amplifiers are an appealing approach to achieve improved RF performance in terms of bandwidth and efficiency, as well as lower memory effects, form-factors and cost. This work discusses the specific design and implementation aspects for low-cost package-integrated PAs. Special attention is given to implementation deviations and tolerances...
This paper presents a new method for the contactless measurement of in-circuit reflection-coefficients (Γinsitu). The proposed method relies on an electromagnetic (EM) model of a known passive structure (e.g. a bondwire array) that can be embedded in any unknown circuitry. By operating the circuit to be investigated normally and probing locally the EM field induced by the known structure inside this...
In this work efficient LDMOS device operation for envelope tracking amplifier systems is discussed. Utilizing the voltage dependence of Cds in combination with a well chosen 2nd harmonic output termination, a “hybrid” combination of class-J* and class-B device operation is defined, which yields improved efficiency at low supply voltages in power back-off, while avoiding device breakdown when operating...
A power-scalable, efficient and very wideband GaN class-E high-power amplifier is described. The large bandwidth performance is achieved by employing the so-called “class-E with parallel-circuit” loading conditions using a very compact all-lumped element implementation. The fundamental loading is realized by the magnetizing inductance of a novel bondwire-based transformer connected directly at the...
Silcon technology has made rapid progress in the field of microwave technology in the last decade, and is now poised to be the dominant microwave semiconductor technology for the next ten years. This paper summarizes the key recent developments in this field, and suggest possibilities for future technological improvements.
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