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In this paper, an equivalent three port scalable Inductor model has been developed for symmetric octagonal spiral inductors. The scalable inductor model is able to achieve good match for two port with center-tap connected to ground, three port differential and three port single-ended structures. Adjustable parameters include the number of turns (N), inner diameter (D), width (W) and spacing (S) of...
In this design contest, the design methodology leading to a high performance Millimeter-wave amplifier in 0.13 μm SiGe BiCMOS is elaborated. Equivalent circuit models of the utilized cascode shielding structure are developed to assist the amplifier design. Meanwhile, final layouts of the passive connections are verified by 3D electromagnetic simulation in ANSYS HFSS. The implemented amplifier obtained...
In this paper, we have developed equivalent scalable inductor models for symmetrically octagonal spiral inductors. Adjustable parameters include number of turns (Nturn), inner diameter (D), width (W) and spacing (S) of inductors with models being scaled over a wide specification range. A complementary frequency independent scalable 4-PI model are presented for accurate modeling When compared with...
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