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In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated 3D EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line (TRL) calibration...
An improved direct parameter extraction method is proposed for III–V heterojunction bipolar transistor (HBT) external base resistance extraction from forward active -parameters. The method is formulated taking into account the current dependence of the intrinsic base–collector capacitance found in III–V HBTs with a fully depleted collector. It is shown that the real part of ...
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