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The core-multishell wurtzite structure (In,Ga)As-(Ga,Al)As-(Ga,Mn)As semiconductor nanowires have been successfully grown on GaAs(111)B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour-liquid-solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400°C, and 230°C, for...
In this work terahertz (THz) pulse emission of the non-vertically aligned GaAs core-shell nanowires (NWs) is investigated. THz emission azimuthal dependencies of different NW samples have been measured. It is shown that these measurements together with theoretical calculations could be a very promising method to determine the effective index of refraction (n0) of the NW ensemble. The measurement of...
THz pulse emission from GaAs and GaAs-MnAs nanowire (NW) samples illuminated by femtosecond laser pulses has been studied. The amplitude of THz pulses emitted by nanowire samples was more than twice larger than that radiated from GaAs substrate. It was found that terahertz emissivity of NW samples rapidly decreases with increasing laser photon energy - behavior that could be explained by localized...
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