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Trap-assisted tunneling (TAT) is a major hurdle in achieving a sub-60-mV/decade subthreshold swing (SS) in tunnel field-effect transistors (TFETs). This paper presents an insight into the TAT process in the presence of field-induced quantum confinement (FIQC) in line TFETs. We show that the SS degradation in line TFETs is mainly caused by TAT through traps located in the bulk of the semiconductor...
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