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By use of Zn-diffusion and oxide-relief apertures in 940 nm VCSEL, state-of-the-art dynamic performance has been demonstrated. A low differential resistance (50 Ω) and a near 30 GHz 3-dB E-O bandwidth can be sustained from room-temperature to 85°C operations.
We successfully demonstrate a 64-Gbps 4-PAM transmission over 2-km OM4 fiber incorporating a Volterra equalizer with BER of 6.5×10−5. Record high bit-rate distance product of 128 Gbps·km is confirmed for optical-interconnect applications.
By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-to-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.
A DMT transmission with 32% and 21.2% data rate improvement by nonlinear Volterra-Wiener compensation respectively for 68.94Gb/s OBTB and 58.39Gb/s over 105m is demonstrated bya 850nm VCSEL with short (λ/2) cavity and mode controlled.
We demonstrate a 40-Gbps PAM4 optical system by employing a photoreceiver with bandwidth of only 9.5 GHz. Following 100 m multimode fiber, the BER of 1.8 × 10−4 and 1.2 × 10−4 after FFE and DFE equalizations are successfully achieved.
Carrier lifetime limited bandwidth in proposed III-Nitride LED is relaxed with further improvement in its internal quantum efficiency. Moderate output power (1.7mW) with record-high 3-dB electrical-to-optical bandwidth (1GHz) among all reported visible LEDs is demonstrated.
By using p-type modulation doping in the highly strained MQWs of high-speed 850 nm VCSELs, significant enhancements in speed, slope efficiency, and maximum power have been simultaneously achieved as compared to those of un-doped references.
Novel duo-mode 850nm VCSELs with short (λ/2) cavity, oxide-relief and Zn-diffusion apertures are demonstrated to balance the trade-off of speed and reaching bottleneck of VCSELs. Extremely-high data rate (47-Gbps) over 1005m OM4-fiber transmission is reported.
850nm VCSELs with record-low driving-current-density (8kA/cm2), small resistance (60Ω), wide-bandwidth (26GHz), and small energy-to-data-rate ratio (228fJ/bit, 3.5mA) for >41Gbit/sec error-free transmission over 100 (2) meter OM4 fiber at room-temperature (85°C) have been demonstrated.
We demonstrate InP photodiodes with large diameter of optical window (40μm). They achieve high-speed (25 GHz) and high-responsivity (0.52A/W) at 0.85 μm wavelength. Error-free 40 Gbit/sec transmissions over 100 meter OM4 fiber have been achieved.
A nonlinear compensation method is demonstrated to boost the launch power for optical interconnects employing OFDM format. A 1.5 dB sensitivity improvement is obtained for a 2-km OM4 fiber transmission system at 15 Gbit/sec.
A high-performance single-mode 850 nm VCSEL array is demonstrated. By using Zn-diffusion apertures with the proper array spacing, a circular-symmetric pattern with CW high-power (140 mW) and narrow divergence angle (∼5°) have been simultaneously achieved.
We demonstrate novel photodiodes with large active diameters (55 µm). Under −1 V bias, they achieve high-speed (14 and 22 GHz), and high responsivity (0.25 and 0.9 A/W), at 0.85 and 1.55 µm wavelength operation respectively.
We demonstrated ultrafast acoustic phonon spectroscopy up to 1.5 THz, and measured the acoustic signals up to 1 THz after they travelled through silica. Acoustic properties of silica films were characterized in sub-THz regime.
By inserting p-type layers into active regions of dual-color GaN LEDs to uniform carrier distribution, the output intensities from quantum-wells near n- and p-sides can be balanced under a low driving-current density (< 45 A/cm2).
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